4n38m, h11d1 m, h11d2m, h11d3m, moc8204m ?high voltage phototransistor optocouplers ?007 fairchild semiconductor corporation www.fairchildsemi.com 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m rev. 1.0.6 september 2009 4n38m, h11d1m, h11d2m, h11d3m, moc8204m high voltage phototransistor optocouplers features high voltage: moc8204m, bv cer = 400v h11d1m, h11d2m, bv cer = 300v h11d3m, bv cer = 200v high isolation voltage: 7500 v ac peak, 1 second underwriters laboratory (ul) recognized file # e90700, volume 2 iec 60747-5-2 approved (ordering option v) applications power supply regulators digital logic inputs microprocessor inputs appliance sensor systems industrial controls general description the 4n38m, h11dxm and moc8204m are photo- transistor-type optically coupled optoisolators. a gallium arsenide infrared emitting diode is coupled with a high voltage npn silicon phototransistor. the device is sup- plied in a standard plastic six-pin dual-in-line package. schematic package outlines emitter collector 1 2 3 anode cathode 4 5 6 base n/c
?007 fairchild semiconductor corporation www.fairchildsemi.com 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m rev. 1.0.6 2 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m ?high voltage phototransistor optocouplers absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. note: 1. parameters meet or exceed jedec registered data (for 4n38m only). symbol parameter device value units tot al device t stg storage temperature all -40 to +150 ? t opr operating temperature all -40 to +100 ? t sol lead solder temperature (wave solder) all 260 for 10 sec ? p d t otal device power dissipation @ t a = 25? derate above 25? all 260 mw 3.5 mw/? emitter i f f orward dc current (1) all 80 ma v r reverse input voltage (1) all 6.0 v i f (pk) f orward current ?peak (1? pulse, 300pps) (1) all 3.0 a p d led power dissipation @ t a = 25? (1) derate above 25? all 150 mw 1.41 mw/? detector p d po w er dissipation @ t a = 25? all 300 mw derate linearly above 25? 4.0 mw/? v cer collector to emitter voltage (1) moc8204m 400 v h11d1m, h11d2m 300 h11d3m 200 4n38m 80 v cbo collector base voltage (1) moc8204m 400 v h11d1m, h11d2m 300 h11d3m 200 4n38m 80 v eco emitter to collector voltage (1) h11d1m, h11d2m, h11d3m, moc8204m 7v i c collector current (continuous) all 100 ma
?007 fairchild semiconductor corporation www.fairchildsemi.com 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m rev. 1.0.6 3 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m ?high voltage phototransistor optocouplers electrical characteristics (t a = 25? unless otherwise specified.) individual component characteristics t ransfer characteristics (t a = 25? unless otherwise speci?d.) *all typical values at t a = 25? note: 2. parameters meet or exceed jedec registered data (for 4n38m only). symbol characteristic test conditions device min. typ.* max. unit emitter v f f orward voltage (2) i f = 10ma all 1.15 1.5 v ? v f ? t a f orward voltage t emp. coef cient all -1.8 mv/? bv r reverse breakdown v oltage i r = 10? all 6 25 v c j j unction capacitance v f = 0v, f = 1mhz all 50 pf v f = 1v, f = 1mhz 65 pf i r reverse leakage current (2) v r = 6v all 0.05 10 ? detector bv cer breakdown voltage collector to emitter (2) r be = 1m ? , i c = 1.0ma, i f = 0 moc8204m 400 v h11d1m/2m 300 h11d3m 200 bv ceo no rbe, i c = 1.0ma 4n38m 80 bv cbo collector to base (2) i c = 100?, i f = 0 moc8204m 400 v h11d1m/2m 300 h11d3m 200 4n38m 80 bv ebo emitter to base i e = 100?, i f = 0 4n38m 7 v bv eco emitter to collector i e = 100?, i f = 0 all 7 10 v i cer leakage current collector to emitter (2) (r be = 1m ? ) v ce = 300v, i f = 0, t a = 25? moc8204m 100 na v ce = 300v, i f = 0, t a = 100? 250 ? v ce = 200v, i f = 0, t a = 25? h11d1m/2m 100 na v ce = 200v, i f = 0, t a = 100? 250 ? v ce = 100v, i f = 0, t a = 25? h11d3m 100 na v ce = 100v, i f = 0, t a = 100? 250 ? i ceo no r be , v ce = 60v, i f = 0, t a = 25? 4n38m 50 na symbol characteristics test conditions device min. typ.* max. units emitter ctr current transfer ratio, collector to emitter i f = 10ma, v ce = 10v, r be = 1m ? h11d1m/2m/3m, moc8204m 2 (20) ma (%) i f = 10ma, v ce = 10v 4n38m 2 (20) v ce(sat) saturation voltage (2) i f = 10ma, i c = 0.5ma, r be = 1m ? h11d1m/2m/3m, moc8204m 0.1 0.40 v i f = 20ma, i c = 4ma 4n38m 1.0 switching times t on non-saturated tu r n-on time v ce = 10v, i ce = 2ma, r l = 100 ? all 5 ? t off tu r n-off time all 5 ?
?007 fairchild semiconductor corporation www.fairchildsemi.com 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m rev. 1.0.6 4 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m ?high voltage phototransistor optocouplers dc electrical characteristics (continued) (t a = 25? unless otherwise specified.) isolation characteristics *all typical values at t a = 25? safety and insulation ratings as per iec 60747-5-2, this optocoupler is suitable for ?afe electrical insulation?only within the safety limit data. compliance with the safety ratings shall be ensured by means of protective circuits. symbol characteristic test conditions device min. typ.* max. units v iso isolation voltage f = 60hz, t = 1 sec. all 7500 v ac peak r iso isolation resistance v i-o = 500 vdc all 10 11 ? c iso isolation capacitance f = 1mhz all 0.2 pf symbol parameter min. typ. max. unit installation classi?ations per din vde 0110/1.89 ta b le 1 f or rated main voltage < 150vrms i-iv f or rated main voltage < 300vrms i-iv climatic classi?ation 55/100/21 p ollution degree (din vde 0110/1.89) 2 cti comparative tracking index 175 v pr input to output test voltage, method b, v iorm x 1.875 = v pr , 100% production test with tm = 1 sec, partial discharge < 5pc 1594 v peak input to output test voltage, method a, v iorm x 1.5 = v pr , type and sample test with tm = 60 sec, partial discharge < 5pc 1275 v peak v iorm max. working insulation voltage 850 v peak v iotm highest allowable over voltage 6000 v peak external creepage 7 mm external clearance 7 mm insulation thickness 0.5 mm rio insulation resistance at ts, v io = 500v 10 9 ?
?007 fairchild semiconductor corporation www.fairchildsemi.com 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m rev. 1.0.6 5 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m ?high voltage phototransistor optocouplers typical performance curves t a ?ambient temperature (?c) normalize d i cer ?dark current fig. 3 normalized output current vs. led input current i f ?led input current (ma) 110 normalize d i cer ?output cu rrent 0.01 0.1 1 10 normalized to: v ce = 10 v i f = 10 ma r be = 10 6 ? t a = 25?c t a ?ambient temperature (?c) normalized i cer ?output cu rrent fig. 4 normalized output current vs. temperature -60 -40 -20 0 20 40 60 80 100 0.1 1 normalized to: v ce = 10v i f = 10ma r be = 10 6 ? t a = 25?c i f = 10ma i f = 5ma i f = 20ma t a ?ambient temperature (?c) normalized i cbo ?coll ector-base current fig. 6 normalized collector-base current vs. temperature -60 -40 -20 0 20 40 60 80 100 0 1 2 3 4 5 6 7 8 9 10 normalized to: v ce = 10v i f = 10ma r be = 10 6 ? t a = 25?c i f = 50ma i f = 10ma i f = 5ma fig. 5 normalized dark current vs. ambient temperature 10 20 30 40 50 60 70 80 90 100 110 0.1 1 10 100 1000 10000 v ce = 300v v ce = 100v v ce = 50v normalized to: v ce = 100v r be = 10 6 ? t a = 25?c v ce ?collector voltage (v) normalized i cer ?output cu rrent fig. 2 normalized output characteristics 0.1 1 10 100 0.01 0.1 1 10 normalized to: v ce = 10v i f = 10ma r be = 10 6 ? t a = 25?c i f = 50ma i f = 5ma i f = 10ma i f ?led forwardcurrent (ma) v f ?forward voltage (v) fig. 1 led forward voltage vs. forward current 110 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 t a = -55?c t a = 25?c t a = 100?c
?007 fairchild semiconductor corporation www.fairchildsemi.com 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m rev. 1.0.6 6 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m ?high voltage phototransistor optocouplers package dimensions 8.13?.89 6.10?.60 pin 1 64 13 0.25?.36 5.08 (max.) 3.28?.53 0.38 (min.) 2.54?.81 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 8.13?.89 6.10?.60 pin 1 64 13 0.25?.36 5.08 (max.) 3.28?.53 0.38 (min.) 2.54?.81 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 7.62 (typ.) 15?(typ.) 0.20?.30 0.20?.30 10.16?0.80 through hole 0.4" lead spacing surface mount rcommended pad layout (1.78) (2.54) (1.52) (7.49) (10.54) (0.76) 8.13?.89 note: all dimensions in mm. 6.10?.60 8.43?.90 pin 1 64 13 0.25?.36 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 0.38 (min.) 3.28?.53 5.08 (max.) 0.20?.30 0.16?.88 (8.13)
?007 fairchild semiconductor corporation www.fairchildsemi.com 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m rev. 1.0.6 7 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m ?high voltage phototransistor optocouplers ordering information marking information option order entry identi?r (example) description no option h11d1m standard through hole device (50 units per tube) s h11d1sm surface mount lead bend sr2 h11d1sr2m surface mount; tape and reel t h11d1tm 0.4" lead spacing v h11d1vm vde 0884 tv h11d1tvm vde 0884, 0.4" lead spacing sv h11d1svm vde 0884, surface mount sr2v h11d1sr2vm vde 0884, surface mount, tape and reel h11d1 v x yy q 1 2 6 4 3 5 de?itions 1f airchild logo 2d e vice number 3 vde mark (note: only appears on parts ordered with vde option ?see order entry table) 4 one digit year code, e.g., ? 5t wo digit work week ranging from ?1 to ?3 6 assembly package code
?007 fairchild semiconductor corporation www.fairchildsemi.com 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m rev. 1.0.6 8 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m ?high voltage phototransistor optocouplers carrier tape specification reflow profile 4.0 0.1 1.5 min user direction of feed 2.0 0.05 1.75 0.10 11.5 1.0 24.0 0.3 12.0 0.1 0.30 0.05 21.0 0.1 4.5 0.20 0.1 max 10.1 0.20 9.1 0.20 1.5 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 c time (s) 0 60 180 120 270 260 c >245 c = 42 sec time above 183 c = 90 sec 360 1.822 c/sec ramp up rate 33 sec
?007 fairchild semiconductor corporation www.fairchildsemi.com 4n38m, h11d1 m, h11d2m, h11d3m, moc8204m rev. 1.0.6 9 tradem arks th e following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its global subsidiaries ,and is not in tended to be an exhaustive list of all such trademarks. auto-spm build it now coreplus corepower crossvolt ctl current transfer logic ecospark e fficentmax ezswitch * * fair child fairchild semiconductor fa ct quiet series fact f ast fa stvcore fetbench flashwriter * fps f-pfs frfet global power resource sm green fps green fps e-series g max gto in tellimax isoplanar me gabuck mi crocoupler microfet mi cropak m illerdrive moti onmax mo tion-spm optologic op toplanar pdp spm powe r-spm po we rtrench powerxs pr ogrammable active droop qfet qs quiet series r apidconfigure saving our world, 1mw/w/kw at a time sm artmax smart start spm stealth s uperfet sup ersot -3 s upersot -6 s upersot -8 s upremos syncfet sy nc-lock * th ep ower franchise ti nyboost tinybuck ti nylogic tinyopto tinypower tinypwm tinywire trifault detect t ruecurrent * serdes uhc ultra frfet unifet vcx vi sualmax xs *t rademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fa i rchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild? 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